maximum ratings (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 600 ma power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =50v 10 na i cbo v cb =50v, t a =125c 10 a i cev v ce =30v, v be =0.5v 50 na bv cbo i c =10ma 60 v bv ceo i c =10ma 60 v bv ebo i e =10ma 5.0 v v ce(sat) i c =150ma, i b =15ma 0.4 v v ce(sat) i c =500ma, i b =50ma 1.6 v v be(sat) i c =150ma, i b =15ma 1.3 v v be(sat) i c =500ma, i b =50ma 2.6 v h fe v ce =10v, i c =0.1ma 75 h fe v ce =10v, i c =1.0ma 100 h fe v ce =10v, i c =10ma 100 h fe v ce =10v, i c =150ma 100 300 CXT2907A surface mount pnp silicon transistor sot-89 case central semiconductor corp. tm r3 ( 19-december 2001) description: the central semiconductor CXT2907A type is an pnp silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.
a c e g f h j k m l b r3 1 3 2 central semiconductor corp. tm sot-89 case - mechanical outline CXT2907A surface mount pnp silicon transistor r3 ( 19-december 2001) lead code: 1) emitter 2) collector 3) base electrical characteristics (continued) symbol test conditions min max units h fe v ce =10v, i c =500ma 50 f t v ce =20v, i c =50ma, f=100mhz 200 mhz cob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v be =2.0v, i c =0, f=1.0mhz 30 pf t on v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 45 ns t d v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 10 ns t r v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 40 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 100 ns t s v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 80 ns t f v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 30 ns bottom view
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